千葉大学 大学院工学研究科・工学部


KushidaMasahito.JPG
串田 正人
クシダ マサヒト
Masahito Kushida
バイオ機能化学領域
バイオプロセス化学教育研究分野
教授
共生応用化学専攻
共生応用化学コース
http://chem.tf.chiba-u.jp/labhtmls/lab1.html
043-290-3438
043-290-3438
kushida@
(@マーク以下にfaculty.chiba-u.jpと入力してください。)
千葉大学工学部電子工学科1983,千葉大学大学院工学研究科1985工学修士,東京工業大学1997工学博士
東京工業大学工学部電子物理工学科助手,神奈川大学工学部電気工学科助手,千葉大学工学部助手,千葉大学大学院自然科学研究科助教授,千葉大学大学院工学研究科准教授,千葉大学普遍教育センター教授,千葉大学国際教養学部教授(大学院工学研究科兼務)2016現職
電気学会,応用物理学会
有機超薄膜の電気物性,分子エレクトロニクス
1)LB法による機能性有機超薄膜の作製評価と超微細パターニングプロセスへの応用2)機能性有機超薄膜の異方性電気伝導と高密度情報記録材料の開発
1) Orientation of J-Aggregate molecules in Langmuir Film and Langmuir- Blodgett Films of Merocyanine Dyes Mixed with Arachidic Acid and n-Octadecane and Irradiation Effect of Visible Light, Thin Solid Films, 516(9) (2008) pp. 2586-2590.
2) Determination of Activation Energy and Electric Dipole Moment of In-Plane High Electrically Conductive Hetero-C12TCNQ /C20 LB films using Thermally Stimulated Current, to be published in T. IEE Japan.
3) Al/無極性LB膜/Auから放出される電流、電圧および電力の解析, T. IEE Japan, 128-A(2) (2008) pp. 81-85.
4) Al/(C12TCNQ+BEDT-TTF)LB膜(有極性)/Auからの電力発生, T. IEE Japan, 128-A(2) (2008) pp. 86-90.
5) Substituent Effect of Photo and Thermal Decomposition Rate of Diazocompounds with Inclusion Compounds, J. Photopolym. Sci. Technol., 19(1) (2006) pp. 129-133.
6) Invariant Energy Release from Al/Polyimide LB Film/Au and Diffusion Electron in the LB film, Thin Solid Films, 509 (2006) pp. 173- 176.
7) Self-assembled Giant Carbon Nanotube Construction Using Langmuir-Blodgett Films, Thin Solid Films, 509 (2006) pp. 160-163.
8) Organic Bistable Memory Switching Phenomena and H-Like Aggregates in Squarylium-Dye Langmuir-Blodgett Films, Thin Solid Films, 509 (2006) pp. 149-153.
9) Control of Photo and Thermal Decomposition of Diazo/PVA and Diazo/PVAc Resist with Inclusion Compounds, J. Photopolym. Sci. Technol, 18 (2) (2005) pp. 187-192.
10) Energy Quenching Effects on Dry-Etching Durability of Alicyclic-Aliphatic Copolymers and Polymer Blends Enhanced by Polymer-Chain Entanglement, Jpn. J. Appl. Phys., 44 (3) (2005)pp.1498-1501.
11) Energy Release and Its Mechanism in Metal/Insulator/Metal Structures with Langmuir-Blodgett films, Jpn. J. Appl. Phys., 44 (1B) (2005) pp. 551-555.
12) Control of Photo and Thermal Decomposition of Diazo/PVA Resist with inclusion Compounds, J. Photopolym. Sci. Technol., 18 (2) (2004) pp. 187-192.
13) A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep UV Lithography: IIIb. Optimization of PAG and Its Content, J. Photopolym. Sci. Technol., 17 (3) (2004) pp. 373-378.
14) A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep UV Lithography: IIIa. Preliminary Results of Optimization of PAG and Its Content, Advances in Imaging Materials and Processes, (2004) pp.293-299.
15) Photodegradable Toners for Electrophotography IIIb. Photodegradation and Photocrosslinking of Matrix Resin – Its Dependence on the UV-light Source and Irradiation Conditions and Reaction Mechanism, Polymeric Mat. Sci. Eng., 88 (2003) pp. 341
16) Photodegradable Toners for Electrophotography III. Accelerated Photodegradation and Suppressed Photocrosslinking of Matrix Resin-Their Dependence on Polymer Composition, UV-light Source, and Irradiation Conditions, Polymer J., 35 (12) (2003) pp. 985-992.
17) Organic bistable memory switching phenomena in squarylium-dye Langmuir-Blodgett films, Jpn. J. Appl. Phys., 42 (Part 2, 6A) (2003) pp. L622-L624.
18) Study of Electric Dipole and Space Charge Characteristics of Al/C(12)TCNQ/Al by Means of Thermally Stimulated Current Measurements, Thin Solid Films, 423 (2003) pp. 224-227.
19) A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep-UV and Vacuum-UV Lithography, J. Photopolym. Sci. Technol., 15(3) (2002) pp. 367-370.
20) Conductance Switching Phenomena and H-Like Aggregates in Squarylium-Dye Langmuir Blodgett Films, Jpn. J. Appl. Phys., 41(Part 2, 3A) (2002) pp. L281-L283.
21) Imaging Characteristics of Diazo Resin with a Dialkylamino Group for Screeen Printing, J. Imaging Sci. Technol., 46(2) (2002) pp. 159-164.
22) A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep Ultraviolet Lithography: II. Limited Permeation of Si Compounds from Liquid Phase, Jpn. J. Appl. Phys., 40(Part 1, 11) (2001) pp.6658-6662.
23) A Surface-Silylated Single-Layer Resist Using Chemical Amplification: A New Simpler Alternative for Multilayer Resist System, J. Photopolym. Sci. Technol., 13(4) (2000) pp. 535-538.
24) Photodegradable Toners for Electro-photography II. Accelerated Photodegradation of Matrix Resin by DUV-Exposure at An Elevated Temperature, Polymer J., 32 (4) (2000) pp. 330-333.
25) A Surface-Silylated Single-Layer Resist Using Chemical Amplification for Deep-Ultraviolet Lithography: I. Limited Permeation of Si Compounds from Vapor Phase, Jpn. J. Appl. Phys, 39(Part 1, 2A) (2000) pp. 669-674.
26) Enhancement of Dry-Etching Durabilities by Energy or Etchant Quenching with Aliphatic, Aromatic and Alicyclic Homopolymers, Polymer Blends and Copolymers, Jpn. J. Appl. Phys., 38(Part 1, 7B) (1999) pp. 4483-4487.
27) Energy Quenching Effects on Dry-Etching Durability of Copolymers and Polymer Blends of Vinylnaphthalene or α-Methyl Styrene with Methyl Methacrylate, Jpn. J. Appl. Phys., 37(Part1, 2) (1998) pp. 715-719.
28) Large Electric Conductance in the Interface Direction of Polar/Nonpolar Double-Layered Hetero-Langmuir-Blodgett Films, Jpn. J. Appl. Phys., 37(Part 1, 1) (1998) pp. 290-294.
29) Highly Photosensitive Diazo Compounds as Photoacid Generators for Chemically Amplified Resists, ACS SYMPOSIUM SERIES, 706 (1997) pp. 126-133.
30) Photodegradable Toners for Electrophotography Ⅰ. Photodegradability of Matrix Resin, Polymer Journal, 28(7) (1996) pp. 637-638.
31) Application of Diazo Complex with 18-Crown-6 to Visible Light Emission Film, J. Soc. Photogr. Sci. Technol. Japan, 59(6) (1996) pp. 705-710.
32) Dry-Etching Durability of Copolymers and Polymer Blends of Vinylnaphthalene or α-Methyl styrene with Methyl Methacrylate, Jpn. J. Appl. Phys., 34(Part 1, 8A) (1995) pp. 4234-4238.
33) Photodegradation mechanism of Phenyl Isopropenyl ketone-methyl methacrylate copolymers in the solid phase and their performance as a deep UV resist, Can. J. Chem. 73(1995) pp. 1841-1848.
34) Study on the Dielectric Loss tanδ of MIM and MIMIM Junctions with Polyimide LB Films, Thin Solid Films, 244 (1994) pp. 977-980.
35) Growth of Pb-Phthalocyanine Thin Films on MoS2 Surface Studied by Means of Low-Energy Electron Transmission Spectroscopy, Jpn. J. Appl. Phys., 33(Part 1, 1A) (1994) pp. 319-323.
36) Study on the Electrical Conduction Mechanism in Al2O3 /Polyimide Langmuir-Blodgett Film Systems, Jpn. J. Appl. Phys., 32(Part 1, 10) (1993) pp. 4709-4713.
37) UV Characteristics and Performance as Positive-Working Deep, Mid, and Near UV Resists of Phenyl Isopropenyl Ketone Copolymers, Polymer Journal, 25(10) (1993) pp. 1059-1067.
38) Site Specific Photochemical Reaction of PMMA by Core Electron Excitation, Jpn. J. Appl. Phys., 32 (1993) pp. 229-231.
39) A Surface Silylated Single-Layer Resist Based on Limited Gas Permeation for Limited Penetration EB Lithography, J. Electrochem. Soc., 139(3) (1992) pp. 802-806.
40) Ultralow Resistivity in Langmuir-Blodgett Heterofilms of Mach Less than the Metal Resistivity and Ultrahigh Current Density, Jpn. J. Appl. Phys., 29(12) (1990) pp. 2792-2799.
41) LBヘテロ膜面内における超低抵抗, 電気学会論文誌A, 110-A (9) (1990) pp. 639-646.
42) LBヘテロ膜におけるポテンシャル井戸の発生, 電気学会論文誌A, 110-A(9) (1990) pp. 630-638.
43) Electrical Characteristics of Polyimide LB Ultra Thin Film Condenser, Electr. Eng. Jpn., 110-A(5) (1990) pp. 1-11.
44) ポリイミドLB超薄膜コンデンサの特性, 電気学会論文誌A, 109-A(12) (1989)pp. 515-522.
45) ヘテロ絶縁超薄膜におけるトンネル障壁, 電気学会論文誌A, 109-A(9) (1989) pp. 413-419.
46) Al自然酸化膜による Al/Al2O3/Au 素子のトンネル伝導, 電気学会論文誌A, 109-A(8) (1989) pp. 365-371.
47) ポリイミドLB超薄膜MIM素子の容量・電圧発生特性, 電気学会論文誌A, 109-A(8) (1989) pp. 357-367.
48) 超薄膜MIM素子の発生電圧, 電気学会論文誌A, 109-A(7) (1989) pp. 287-294.
49) Withstand Electrical Field Properties of Polyimide LB Ultrathin Films to Pulse Voltage Thin Film Condensers of M/I1/I2/M Structure, Electr. Eng. Jpn., 108-A(4) (1988) pp. 1-7.
50) ポリイミドLB超薄膜の パルス耐電界性と その M/I1/I2/M 構造超薄膜コンデンサ,電気学会論文誌A, 107-A(12) (1987) pp. 555-561.
51) ポリイミドLangmuir-Blodgett絶縁薄膜の超高電界における現象, 電気学会論文誌A, 107-A(3) (1987) pp. 142-148.
1)電気・電子材料,森北出版, (1991,共著).
[学部] 基礎化学A, 熱統計力学演習, 化学基礎実験,
   共生応用化学実験, 共生応用化学セミナー, セミナーI
[博士前期課程] 生物材料科学
[博士後期課程] バイオプロセス化学特論
串田_研究概要.pdf(pdf)