千葉大学 大学院工学研究科・工学部


MA BEI
マ ベイ
助教
人工システム科学専攻
電気電子系コース
電気電子工学科
光エレクトロニクス
043-290-3331
043-290-3331
mabei@
(@マーク以下にchiba-u.jpと入力してください。)
2008 三重大学工学部電気電子工学科 
2010 三重大学大学院工学研究科電気電子工学専攻修士(工学)
2013 三重大学大学院工学研究科材料科学専攻博士(工学)
2010.4 日本学術振興会特別研究員 DC1
2013.4 三重大学工学研究科学術研究員
2013.6 現職
応用物理学会、結晶成長学会
窒化物半導体結晶成長、半導体光物性
1.Yoshihiro Ishitani, Keisuke Hatta, Ken Morita and Bei Ma, “Dielectric absorption of s-polarized infrared light resonant to longitudinal optical phonon energy incident on lateral (0001)GaN/Ti stripe structures”, Journal of Physics D 48, 095103 (1-4) (2015)
2.“Simulation of exciton and carrier energy excitation and relaxation dynamics in GaN”, B. Ma, K. Takahashi, K. Takeuchi, T. Iwahori, K. Morita and Y. Ishitani, The First International Conference on Nanoenergy and Nanosystems (NENS2014), December 8-10, 2014, Beijing, China (招待講演)
3.Jinno Daiki, Bei Ma, Hedeto Miyake, Kazumasa Hiramatsu, Yuuki Enatsu and Satoru Nagao, “Selective area growth of semipolar (20-21) and (20-2-1) GaN by MOVPE”, Jpn. J. Appl. Phys., 52 (2013) 08JC06
4.Bei Ma Daiki Jinno, Hideto Miyake, Kazumasa Hiramatsu and Hiroshi Harima, “Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates”,
Appl. Phys. Lett. 100 (2012) 011909.
5.Bei Ma, Hideto Miyake, Kazumasa Hiramatsu and Hiroshi Harima, “Stress analysis of a-plane GaN grown on r-plane sapphire substrates”, Phys. Stat. Sol. (C) 8 (2011) 2066.
6.Weiguo Hu, Bei Ma, Dabing Li, Reina Miyagawa, Hideto Miyake and Kazumasa Hiramatsu, “Effects of AlN Interlayer on Distribution and Mobility of two-dimension electron gas in AlGaN/AlN/GaN heterojunctions”, Jpn. J. Appl. Phys. 49 (2010) 035701.
7.Bei Ma, Reina Miyagawa, Hideto Miyake and Kazumasa Hiramatsu, “Facet control in selective area growth (SAG) of a-plane GaN by MOVPE”, Materials Research Society Proceeding 1202 (2010) I05-12.
8.Mitsuhisa Narukawa, Reina Miyagawa, Bei Ma, Hideto Miyake and Kazumasa Hiramatsu, “Optical properties of MOVPE-grown a-plane GaN and AlGaN”, J. Cryst. Growth, 311 (2009) 2903.
9.Bei Ma, Weiguo Hu, Hideto Miyake and Kazumasa Hiramatsu, “Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy”, Appl. Phys. Lett. 95 (2009) 121910.
10.Bei Ma, Reina Miyagawa, Weiguo Hu, Dabing Li, Hideto Miyake and Kazumasa Hiramatsu, “Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE”, J. Cryst. Growth, 311 (2009) 2899.
11.Weiguo Hu, Bei Ma, Dabing Li, Hideto Miyake and Kazumasa Hiramatsu, “In-plane electric field induced by the polarization and photovoltaic effect in a-plane GaN”, Appl. Phys. Lett. 94 (2009) 231102.
12.Dabing Li, Bei Ma, Reina Miyagawa, Weiguo Hu, Mitsuhisa Narukawa, Hideto Miyake and Kazumasa Hiramatsu, “Photoluminescence study of Si-doped a-plane GaN grown by MOVPE”, J. Cryst. Growth, 311 (2009) 2906.
13.Weiguo Hu, Bei Ma, Dabing Li, Mitsuhisa Narukawa, Hideto Miyake and Kazumasa Hiramatsu, “Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0001) sapphire”, Superlatt. Microstruc. 46 (2009) 812.
14.Reina Miyagawa, Mitsuhisa Narukawa, Bei Ma, Hideto Miyake and Kazumasa Hiramatsu, “Reactor-pressure dependence of a-plane GaN growth on r-plane sapphire by MOVPE”, J. Cryst. Growth, 310 (2008) 4979.